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PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211
PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
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PDF) Correlation Between Electrical Performance and Gate Width of GaN-based HEMTs
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Electron Device Letters - IEEE Electron Devices Society
IEEE Electron Devices Society - This month, the Cover Article for the IEEE Electron Device Letters is on 3D NOR flash with single-crystal silicon channel. Click to read, https://bit.ly/3ssMecZ Please enjoy this
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The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
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PDF) Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
Publications - IEEE Electron Devices Society
Transactions on Electron Devices - IEEE Electron Devices Society
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PDF) Front cover - IEEE Electron Device Letters ( Volume: 42, Issue: 10, Oct. 2021)
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Electron Device Letters - IEEE Electron Devices Society
